INVESTIGATION OF THE INTERFACE CHEMISTRY OF TITANIUM TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO SILICON BY AUGER-SPECTROSCOPY

被引：0

作者：

LEWIS, JE ^{[1
]}

ABOELFOTOH, MO ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573363

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：971 / 972

页数：2

共 47 条

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IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) : 746 - 749
[32] Microscopic correspondence between Schottky-barrier height and interface morphology at thermally degraded Al/(111)Si contacts
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DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 1996, 149 : 307 - 312
[33] Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (11) : 1284 - 1289
[34] INVESTIGATION OF DIAMOND-SILICON HETERO-STRUCTURE BY THE METHOD OF AUGER-SPECTROSCOPY AND ELECTRON-MICROSCOPY
OLEVSKII, SS
REPKO, VP
ALEXANDROV, GV
DOKLADY AKADEMII NAUK SSSR, 1979, 245 (06): : 1382 - 1385
[35] TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON
ABOELFOTOH, MO
SOLID-STATE ELECTRONICS, 1991, 34 (01) : 51 - 55
[36] INVESTIGATION OF THE INSB(110)-SN SCHOTTKY-BARRIER BY MEANS OF ELECTRON-ENERGY LOSS SPECTROSCOPY
FORSTER, A
LUTH, H
SURFACE SCIENCE, 1987, 189 : 307 - 314
[37] Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study
Ivanco, J
Almeida, J
Coluzza, C
Zwick, F
Margaritondo, G
VACUUM, 1998, 50 (3-4) : 407 - 411
[38] EFFECTS OF THE PRESENCE OF NATIVE SILICON-OXIDE AT THE FE/SI INTERFACE ON THE FORMATION OF SILICIDES STUDIED BY AUGER-SPECTROSCOPY
CHEMELLI, C
DANGELO, D
GIRARDI, G
PIZZINI, S
APPLIED SURFACE SCIENCE, 1993, 68 (02) : 173 - 177
[39] THE SCHOTTKY-BARRIER HEIGHT OF THE CONTACTS BETWEEN SOME RARE-EARTH-METALS (AND SILICIDES) AND P-TYPE SILICON
NORDE, H
DESOUSAPIRES, J
DHEURLE, F
PESAVENTO, F
PETERSSON, S
TOVE, PA
APPLIED PHYSICS LETTERS, 1981, 38 (11) : 865 - 867
[40] REACTIVITY AND INTERFACE CHEMISTRY DURING SCHOTTKY-BARRIER FORMATION - METALS ON THIN NATIVE OXIDES OF GAAS INVESTIGATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
KOWALCZYK, SP
WALDROP, JR
GRANT, RW
APPLIED PHYSICS LETTERS, 1981, 38 (03) : 167 - 169

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