INVESTIGATION OF THE INTERFACE CHEMISTRY OF TITANIUM TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO SILICON BY AUGER-SPECTROSCOPY

被引：0

作者：

LEWIS, JE ^{[1
]}

ABOELFOTOH, MO ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573363

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：971 / 972

页数：2

共 47 条

[21] SCHOTTKY-BARRIER HEIGHTS AND INTERFACE CHEMISTRY IN AG, IN, AND AL OVERLAYERS ON GAP(110)
ALONSO, M
CIMINO, R
MAIERHOFER, C
CHASSE, T
BRAUN, W
HORN, K
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 955 - 963
[22] SCHOTTKY-BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINUM-TITANIUM-GALLIUM ARSENIDE CONTACTS
WADA, Y
CHINO, KI
SOLID-STATE ELECTRONICS, 1983, 26 (06) : 559 - 564
[23] Investigation of the possibilities of the 'saddle points' model for an explanation of anomalies in the characteristics of Schottky-barrier contacts
Shmargunov, Anton V.
Bozhkov, Vladimir G.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
[24] BALLISTIC-ELECTRON-EMISSION MICROSCOPY INVESTIGATION OF SCHOTTKY-BARRIER INTERFACE FORMATION
HECHT, MH
BELL, LD
KAISER, WJ
GRUNTHANER, FJ
APPLIED PHYSICS LETTERS, 1989, 55 (08) : 780 - 782
[25] ELECTRON-TRANSPORT MECHANISMS IN METAL SCHOTTKY-BARRIER CONTACTS TO HYDROGENATED AMORPHOUS-SILICON
HELLER, DE
DAWSON, RM
MALONE, CT
NAG, S
WRONSKI, CR
JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2377 - 2384
[26] SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF ANNEALED METAL CONTACTS TO ALPHA-6H-SIC - CRYSTAL-FACE DEPENDENCE
WALDROP, JR
GRANT, RW
APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2685 - 2687
[27] PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT AT THE NICKEL-SILICIDE SILICON INTERFACE
SHEN, TH
MATTHAI, CC
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (05) : 613 - 615
[28] SCHOTTKY-BARRIER HEIGHTS OF TRANSITION-METAL-SILICIDE SILICON CONTACTS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS
HIROSE, K
OHDOMARI, I
UDA, M
PHYSICAL REVIEW B, 1988, 37 (12): : 6929 - 6932
[29] WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS
WALDROP, JR
GRANT, RW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1432 - 1435
[30] EFFECT OF ENERGY-DISTRIBUTION OF INTERFACE STATES ON THE CAPACITANCE AND CONDUCTANCE OF SCHOTTKY-BARRIER AND MIS TUNNEL CONTACTS
RAYCHAUDHURI, B
CHATTOPADHYAY, P
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 141 (01): : K71 - K75

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