INVESTIGATION OF THE INTERFACE CHEMISTRY OF TITANIUM TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO SILICON BY AUGER-SPECTROSCOPY

被引：0

作者：

LEWIS, JE ^{[1
]}

ABOELFOTOH, MO ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573363

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：971 / 972

页数：2

共 47 条

[1] INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS
WALDROP, JR
APPLIED PHYSICS LETTERS, 1982, 41 (04) : 350 - 352
[2] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS
WALDROP, JR
GRANT, RW
APPLIED PHYSICS LETTERS, 1979, 34 (10) : 630 - 632
[3] SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
DIMITRIADIS, CA
LOGOTHETIDIS, S
ALEXANDROU, I
APPLIED PHYSICS LETTERS, 1995, 66 (04) : 502 - 504
[4] TITANIUM NITRIDE SCHOTTKY-BARRIER CONTACTS TO GAAS
WALDROP, JR
APPLIED PHYSICS LETTERS, 1983, 43 (01) : 87 - 89
[5] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION
WALDROP, JR
KOWALCZYK, SP
GRANT, RW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 607 - 610
[6] NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
GUO, SF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C325 - C325
[7] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON
FINETTI, M
SUNI, I
BARTUR, M
BANWELL, T
NICOLET, MA
SOLID-STATE ELECTRONICS, 1984, 27 (07) : 617 - 623
[8] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED HFN CONTACTS ON SILICON
PAN, ETS
NICOLET, MA
SOLID-STATE ELECTRONICS, 1985, 28 (08) : 775 - 777
[9] INFLUENCE OF S AND SE ON THE SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF AU CONTACTS TO GAAS
WALDROP, JR
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1197 - 1201
[10] SCHOTTKY-BARRIER AND CONTACT RESISTANCE AT A NIOBIUM SILICON INTERFACE
HESLINGA, DR
KLAPWIJK, TM
APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1048 - 1050

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