INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES

被引：1
|
作者：
FOBELETS, K [1 ]
VOUNCKX, R [1 ]
BORGHS, G [1 ]
机构：
[1] INTERUNIV MICROELECTR CTR VZW,B-3001 LOUVAIN,BELGIUM
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 01期
关键词：
DIODES; TUNNEL DIODES;
D O I：
10.1049/el:19930038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An equivalent circuit for vertically integrated resonant tunnelling diodes with different diode area is proposed. Vertical and horizontal current paths through the structure are characterised by resistances which explain the difference between the characteristics of a monolithically integrated and a discrete series connection.
引用
收藏
页码：57 / 59
页数：3
相关论文
共 50 条
  • [41] Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes
    Li, Mengwei
    Deng, Tao
    Du, Kang
    Chu, WeiHang
    Liu, Jun
    Chen, Houjin
    Liu, Zewen
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (01):
  • [42] Computer Statistical Experiment for Analysis of Resonant-Tunneling Diodes I-V Characteristics
    Cherkasov, Kirill
    Meshkov, Sergey
    Makeev, Mstislav
    Ivanov, Yury
    Shashurin, Vasily
    Tsvetkov, Yury
    Khlopov, Boris
    INTERNATIONAL SCIENTIFIC CONFERENCE ENERGY MANAGEMENT OF MUNICIPAL FACILITIES AND SUSTAINABLE ENERGY TECHNOLOGIES EMMFT 2018, VOL 2, 2019, 983 : 626 - 634
  • [43] Emitter Spacer Layers Influence on the Dynamic Characteristics of Resonant-Tunneling Diode
    Grishakov, Konstantin S.
    Elesin, Vladimir F.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (07) : 2963 - 2969
  • [44] MEASUREMENT OF NEGATIVE DIFFERENTIAL CONDUCTANCE TO 40 GHZ FOR VERTICALLY INTEGRATED RESONANT TUNNELING DIODES
    MOUNAIX, P
    BEDU, P
    LIPPENS, D
    BARBIER, E
    ELECTRONICS LETTERS, 1991, 27 (15) : 1358 - 1360
  • [45] The Influence of Strain Relaxation on the Electrical Properties of Submicron Si/SiGe Resonant-Tunneling Diodes
    P. W. Lukey
    J. Caro
    T. Zijlstra
    E. van der Drift
    S. Radelaar
    Analog Integrated Circuits and Signal Processing, 2000, 24 (1) : 27 - 35
  • [46] The influence of strain relaxation on the electrical properties of submicron Si/SiGe resonant-tunneling diodes
    Lukey, PW
    Caro, J
    Zijlstra, T
    van der Drift, E
    Radelaar, S
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2000, 24 (01) : 27 - 35
  • [47] THE EFFECT OF GROWTH TEMPERATURE ON ALAS GAAS RESONANT-TUNNELING DIODES
    FORSTER, A
    LANGE, J
    GERTHSEN, D
    DIEKER, C
    LUTH, H
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (01) : 175 - 178
  • [48] A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES
    FOBELETS, K
    VOUNCKX, R
    BORGHS, G
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) : 123 - 128
  • [49] FABRICATION OF RESONANT-TUNNELING OPTICAL BISTABLE LASER-DIODES
    KAWAMURA, Y
    ASAI, H
    IWAMURA, H
    ELECTRONICS LETTERS, 1994, 30 (03) : 225 - 227
  • [50] EFFECT OF HIGH-CURRENT DENSITY AND DOPING CONCENTRATION ON THE CHARACTERISTICS OF GAAS/ALAS VERTICALLY INTEGRATED RESONANT TUNNELING DIODES
    PARK, BG
    WOLAK, E
    HARRIS, JS
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) : 7141 - 7148
12345