INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES

被引：1

作者：

FOBELETS, K ^{[1
]}

VOUNCKX, R ^{[1
]}

BORGHS, G ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR VZW,B-3001 LOUVAIN,BELGIUM

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

DIODES; TUNNEL DIODES;

D O I：

10.1049/el:19930038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An equivalent circuit for vertically integrated resonant tunnelling diodes with different diode area is proposed. Vertical and horizontal current paths through the structure are characterised by resistances which explain the difference between the characteristics of a monolithically integrated and a discrete series connection.

引用

页码：57 / 59

页数：3

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