INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES

被引：1
|
作者：
FOBELETS, K [1 ]
VOUNCKX, R [1 ]
BORGHS, G [1 ]
机构：
[1] INTERUNIV MICROELECTR CTR VZW,B-3001 LOUVAIN,BELGIUM
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 01期
关键词：
DIODES; TUNNEL DIODES;
D O I：
10.1049/el:19930038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An equivalent circuit for vertically integrated resonant tunnelling diodes with different diode area is proposed. Vertical and horizontal current paths through the structure are characterised by resistances which explain the difference between the characteristics of a monolithically integrated and a discrete series connection.
引用
收藏
页码：57 / 59
页数：3
相关论文
共 50 条
  • [31] HIGH-FREQUENCY SIMULATION OF RESONANT-TUNNELING DIODES
    LIOU, WR
    ROBLIN, P
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1098 - 1111
  • [32] OPTIMIZED RESONANT-TUNNELING LIGHT-EMITTING-DIODES
    KINDLIHAGEN, A
    WILLANDER, M
    CHAO, KA
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1391 - 1393
  • [33] EFFECT OF SPACER LAYERS ON CAPACITANCE OF RESONANT-TUNNELING DIODES
    WEI, T
    STAPLETON, S
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1287 - 1290
  • [34] Theory of digital magnetoresistance in ferromagnetic resonant-tunneling diodes
    Ertler, Christian
    Fabian, Jaroslav
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [35] EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES
    JOGAI, B
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (04) : 383 - 385
  • [36] Comparison of bistable circuits based on resonant-tunneling diodes
    González, AF
    Mazumder, P
    16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 493 - 498
  • [37] Carbon nanotube resonant-tunneling diodes as terahertz oscillators
    Dragoman, M
    Dragoman, D
    2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, : 75 - 78
  • [38] Large-signal dynamics of resonant-tunneling diodes
    Ourednik, P.
    Picco, G.
    Nguyen, D. Tuan
    Spudat, C.
    Feiginov, M.
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (01)
  • [39] RESONANT-TUNNELING DIODES AS SOURCES FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS
    BOUREGBA, R
    VANBESIEN, O
    MOUNAIX, P
    LIPPENS, D
    PALMATEER, L
    PERNOT, JC
    BEAUDIN, G
    ENCRENAZ, P
    BOCKENHOFF, E
    NAGLE, J
    BOIS, P
    CHEVOIR, F
    VINTER, B
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (11) : 2025 - 2027
  • [40] Effect of the device size on the performance of resonant-tunneling diodes
    Figielski, T
    Morawski, A
    Pelya, O
    Wosinski, T
    Makosa, A
    Tkaczyk, Z
    Dobrowolski, W
    Karczewski, G
    Kosiel, K
    Dobrzanski, L
    EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 55 - 59
12345