A MODEL OF FIELD (TUNNEL) GENERATION OF POSITIVE CHARGE IN THERMAL SILICON DIOXIDE OF SI-SIO2 STRUCTURES

被引：1
|
作者：
MIKHAILOVSKII, IP
EPOV, AE
机构：
[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期
关键词：
SEMICONDUCTING SILICON;
D O I：
10.1002/pssa.2210920236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model is developed of field (tunnel) generation of positive charge in thermal silicon dioxide of Si-SiO//2 structures under high electric fields. The main characteristics of accumulated charge, i. e. kinetic DELTA U//F//B(t), depth and current-time dependences, etc are numerically simulated. It is shown that the model satisfactorily explains some experimentally observed facts and the mechanism of tunnel ionization must be taken into account, when charge accumulation in dielectrics under high field condition is investigated.
引用
收藏
页码：615 / 622
页数：8
相关论文
共 50 条
  • [41] FIELD ION MICROSCOPIC OBSERVATION OF Si-SiO2
    Umeno, M.
    Tagawa, M.
    Ohmae, N.
    Miyanaga, M.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1996, 52 : C462 - C462
  • [42] Hydrogenous species and charge defects in the Si-SiO2 system
    Poindexter, EH
    Young, CF
    Gerardi, GJ
    FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 397 - 409
  • [43] CHARACTERIZATION AND MEASUREMENT OF ELECTRIC CHARGE IN SI-SIO2 INTERPHASES
    PEREZDELASOTA, R
    VELASCO, G
    ANALES DE FISICA, 1971, 67 (3-4): : 143 - +
  • [44] INVESTIGATION OF SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM
    BROTHERTON, SD
    READ, TG
    LAMB, DR
    WILLOUGHBY, AF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C98 - +
  • [45] Si-SiO2 interface charge traps characterization by charge pumping technique
    Jastrzebski, C.
    Strzalkowski, I.
    Bakowski, A.
    Electron Technology (Warsaw), 28 (1-2):
  • [46] EFFECT OF SILICON ORIENTATION AND THE TECHNIQUE OF THERMAL-OXIDATION ON THE SI-SIO2 BARRIER ENERGIES
    ADAMCHUK, VK
    DORODNEV, VN
    VESTNIK LENINGRADSKOGO UNIVERSITETA SERIYA FIZIKA KHIMIYA, 1979, (02): : 19 - 24
  • [47] On the kinetics of generation of point defects in the Si-SiO2 system
    Kropman, D
    Abru, U
    Samoson, A
    Kärner, T
    THIN SOLID FILMS, 1999, 343 : 412 - 415
  • [48] Electroluminescence of ion-implanted Si-SiO2 structures
    A. P. Baraban
    P. P. Konorov
    L. V. Malyavka
    A. G. Troshikhin
    Technical Physics, 2000, 45 : 1042 - 1044
  • [49] PROPERTIES OF CARRIERS AT SI-SIO2 INTERFACE IN MOSFET STRUCTURES
    STILES, PJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 958 - 961
  • [50] DEPTH PROFILING OF Si-SiO2 INTERFACE STRUCTURES.
    Suzuki, Toshihisa
    Muto, Masaaki
    Hara, Motohiro
    Yamabe, Kikuo
    Hattori, Takeo
    1600, (25):
12345