Electroluminescence of ion-implanted Si-SiO2 structures

被引：0
|
作者：
A. P. Baraban
P. P. Konorov
L. V. Malyavka
A. G. Troshikhin
机构：
[1] St. Petersburg State University,Institute of Physics
来源：
Technical Physics | 2000年 / 45卷
关键词：
Oxide; Oxide Layer; Luminescent Center; SIMOX; Layer Bulk;
D O I：
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中图分类号：
学科分类号：
摘要：
Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250–800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.
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页码：1042 / 1044
页数：2
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