A MODEL OF FIELD (TUNNEL) GENERATION OF POSITIVE CHARGE IN THERMAL SILICON DIOXIDE OF SI-SIO2 STRUCTURES

被引：1

作者：

MIKHAILOVSKII, IP

EPOV, AE

机构：

[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期

关键词：

SEMICONDUCTING SILICON;

D O I：

10.1002/pssa.2210920236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model is developed of field (tunnel) generation of positive charge in thermal silicon dioxide of Si-SiO//2 structures under high electric fields. The main characteristics of accumulated charge, i. e. kinetic DELTA U//F//B(t), depth and current-time dependences, etc are numerically simulated. It is shown that the model satisfactorily explains some experimentally observed facts and the mechanism of tunnel ionization must be taken into account, when charge accumulation in dielectrics under high field condition is investigated.

引用

页码：615 / 622

页数：8

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