A FURTHER COMMENT ON THE WEAK-BEAM CONTRAST OF STACKING-FAULTS IN SILICON

被引：5

作者：

WILKENS, M

FOLL, H

CARTER, CB

机构：

[1] SIEMENS AG,COMPONENTS GRP,DISCRETE SEMICOND,D-8000 MUNICH 83,FED REP GER

[2] CORNELL UNIV,ITHACA,NY 14850

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 01期

关键词：

D O I：

10.1002/pssa.2210730140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K15 / K19

页数：5

共 50 条

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