A FURTHER COMMENT ON THE WEAK-BEAM CONTRAST OF STACKING-FAULTS IN SILICON

被引：5
|
作者：
WILKENS, M
FOLL, H
CARTER, CB
机构：
[1] SIEMENS AG,COMPONENTS GRP,DISCRETE SEMICOND,D-8000 MUNICH 83,FED REP GER
[2] CORNELL UNIV,ITHACA,NY 14850
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 01期
关键词：
D O I：
10.1002/pssa.2210730140
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K15 / K19
页数：5
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