A FURTHER COMMENT ON THE WEAK-BEAM CONTRAST OF STACKING-FAULTS IN SILICON

被引：5

作者：

WILKENS, M

FOLL, H

CARTER, CB

机构：

[1] SIEMENS AG,COMPONENTS GRP,DISCRETE SEMICOND,D-8000 MUNICH 83,FED REP GER

[2] CORNELL UNIV,ITHACA,NY 14850

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 01期

关键词：

D O I：

10.1002/pssa.2210730140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K15 / K19

页数：5

共 50 条

[31] IMAGE-CONTRAST DUE TO MAGNETIC STACKING-FAULTS
MARUYAMA, S
PHILIBERT, J
JOURNAL OF ELECTRON MICROSCOPY, 1984, 33 (03): : 288 - 289
[32] ELECTRON-DIFFRACTION CONTRAST OF OVERLAPPING STACKING-FAULTS
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SKALICKY, P
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (04) : 1112 - 1117
[33] THE CONTRAST OF STACKING-FAULTS IN OPTICAL BIREFRINGENCE MICROGRAPHS OF DIAMOND
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[34] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON
HU, SM
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573
[35] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
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[36] GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS
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[37] GENERALIZED WANNIER FUNCTIONS AT INTERFACES - STACKING-FAULTS IN SILICON
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VERGES, JA
TEJEDOR, C
PHYSICAL REVIEW B, 1981, 24 (02): : 1006 - 1013
[38] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
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PHYSICS LETTERS A, 1978, 68 (01) : 93 - 94
[39] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
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KUSHNER, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 570 - 576
[40] DEFECT STATES ASSOCIATED WITH DISLOCATIONS AND STACKING-FAULTS IN SILICON
KIMERLING, LC
LEAMY, HJ
PATEL, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 267 - 267

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