FORMATION OF PHOTOSENSITIVE MATERIALS BY ION-IMPLANTATION OF OXYGEN IONS IN SILICA

被引：13

作者：

MAGRUDER, RH

HENDERSON, DO

WHITE, CW

ZUHR, RA

机构：

[1] FISK UNIV,DEPT PHYS,NASHVILLE,TN 37203

[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 159卷 / 03期

关键词：

D O I：

10.1016/0022-3093(93)90233-N

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oxygen ions were implanted at 5 MeV in high purity silica to a dose of 3 x 10(16) ions/cm2. Samples were subsequently exposed to a series of 5 eV KrF excimer laser irradiations. Optical absorption and infrared reflectance spectra were measured before and after each series of irradiations. This material exhibits a photobleaching behavior that may be useful for planar waveguide devices.

引用

页码：269 / 273

页数：5

共 50 条

[41] DAMAGE FORMATION AND ANNEALING OF ION-IMPLANTATION IN SI
TAMURA, M
MATERIALS SCIENCE REPORTS, 1991, 6 (4-5): : 141 - 214
[42] FORMATION OF BORIDES AND NITRIDES BY ION-IMPLANTATION IN IRON
RAUSCHENBACH, B
HEERA, V
JOURNAL OF THE LESS-COMMON METALS, 1986, 117 (1-2): : 323 - 327
[43] POSSIBILITIES OF THE FORMATION OF CARBIDES AND BORIDES BY ION-IMPLANTATION
DIENEL, G
HOHMUTH, K
TREUTLER, CPO
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 67 - 71
[44] FORMATION OF SCHOTTKY JUNCTIONS IN SILICON BY ION-IMPLANTATION
BOLLMANN, J
KLOSE, H
MERTENS, A
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K95 - K99
[45] FORMATION OF GLASSY FILMS BY ION-IMPLANTATION INTO METALS
HOHMUTH, K
KOLITSCH, A
RAUSCHENBACH, B
RICHTER, E
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 56 (1-3) : 381 - 384
[46] THE FORMATION OF BURIED OXIDE LAYERS BY ION-IMPLANTATION
WOODS, TA
ANTONELLI, E
COLLINS, RA
CHIVERS, DJ
DEARNALEY, G
VACUUM, 1986, 36 (11-12) : 883 - 885
[47] FORMATION OF BURIED NITRIDE LAYERS BY ION-IMPLANTATION
DANILOWITSCH, J
GARTNER, K
GOTZ, G
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4): : 437 - 439
[48] MECHANISMS OF BURIED OXIDE FORMATION BY ION-IMPLANTATION
WHITE, AE
SHORT, KT
BATSTONE, JL
JACOBSON, DC
POATE, JM
WEST, KW
APPLIED PHYSICS LETTERS, 1987, 50 (01) : 19 - 21
[49] BURIED INSULATOR FORMATION IN SILICON BY ION-IMPLANTATION
STEIN, HJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C319 - C319
[50] BURIED OPTICAL-WAVEGUIDES IN FUSED SILICA BY HIGH-ENERGY OXYGEN ION-IMPLANTATION
RAO, EVK
MOUTONNET, D
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 955 - 957

← 1 2 3 4 5 →