FORMATION OF PHOTOSENSITIVE MATERIALS BY ION-IMPLANTATION OF OXYGEN IONS IN SILICA

被引：13

作者：

MAGRUDER, RH

HENDERSON, DO

WHITE, CW

ZUHR, RA

机构：

[1] FISK UNIV,DEPT PHYS,NASHVILLE,TN 37203

[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 159卷 / 03期

关键词：

D O I：

10.1016/0022-3093(93)90233-N

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oxygen ions were implanted at 5 MeV in high purity silica to a dose of 3 x 10(16) ions/cm2. Samples were subsequently exposed to a series of 5 eV KrF excimer laser irradiations. Optical absorption and infrared reflectance spectra were measured before and after each series of irradiations. This material exhibits a photobleaching behavior that may be useful for planar waveguide devices.

引用

页码：269 / 273

页数：5

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