FORMATION OF PHOTOSENSITIVE MATERIALS BY ION-IMPLANTATION OF OXYGEN IONS IN SILICA

被引：13
|
作者：
MAGRUDER, RH
HENDERSON, DO
WHITE, CW
ZUHR, RA
机构：
[1] FISK UNIV,DEPT PHYS,NASHVILLE,TN 37203
[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 159卷 / 03期
关键词：
D O I：
10.1016/0022-3093(93)90233-N
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Oxygen ions were implanted at 5 MeV in high purity silica to a dose of 3 x 10(16) ions/cm2. Samples were subsequently exposed to a series of 5 eV KrF excimer laser irradiations. Optical absorption and infrared reflectance spectra were measured before and after each series of irradiations. This material exhibits a photobleaching behavior that may be useful for planar waveguide devices.
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页码：269 / 273
页数：5
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