RELIABILITY OF AVALANCHE-DIODES

被引：0

|

作者：

不详

机构：

来源：

INTERNATIONALE ELEKTRONISCHE RUNDSCHAU | 1974年 / 28卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：59 / 60

页数：2

相关论文

共 50 条

[21] INTRINSIC NOISE IN AVALANCHE-DIODES .1. THEORY
SAXENA, P
MATHUR, PC
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : 383 - 398
[22] MODEL OF THE BULK 1/F NOISE IN AVALANCHE-DIODES
DYAKONOVA, NV
LEVINSHTEIN, ME
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 743 - 746
[23] MICROWAVE OSCILLATION IN GERMANIUM AVALANCHE-DIODES .3.
TAKESHIMA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) : 1367 - 1376
[24] ANALOG FREQUENCY-DIVIDERS USING AVALANCHE-DIODES
DALLE, C
ABICHAAYA, E
VERSCHOORE, M
ROLLAND, PA
ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1990, 45 (3-4): : 137 - 143
[25] NONISOTHERMAL DRIFT-DIFFUSION MODEL OF AVALANCHE-DIODES
STOILJKOVIC, V
HOWES, MJ
POSTOYALKO, V
JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5493 - 5495
[26] HEAT-FLOW RESISTANCE EVALUATION IN AVALANCHE-DIODES
SELLBERG, F
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 763 - 765
[27] LOW-FREQUENCY CHARACTERISTICS OF IMPEDANCE OF GERMANIUM AVALANCHE-DIODES
TAKESHIMA, M
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3965 - 3971
[28] APPROXIMATE TURN-OFF THEORY FOR MINIATURE AVALANCHE-DIODES
OLDHAM, WG
ANTOGNETTI, P
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (02): : 555 - 559
[29] EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES
CHIVE, M
CONSTANT, E
LEFEBVRE, M
PRIBETICH, J
PROCEEDINGS OF THE IEEE, 1975, 63 (05) : 824 - 826
[30] ANTIPARALLEL OPERATION OF MULTIPLE HIGH-EFFICIENCY AVALANCHE-DIODES
KAWAMOTO, H
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (01) : 10 - +

← 1 2 3 4 5 →