EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES

被引：14

作者：

CHIVE, M ^{[1
]}

CONSTANT, E ^{[1
]}

LEFEBVRE, M ^{[1
]}

PRIBETICH, J ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE,CNRS,CTR HYPERFREQUENCES & SEMICOND,59650 VILLENEUVE DASCQ,FRANCE

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 05期

关键词：

D O I：

10.1109/PROC.1975.9838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：824 / 826

页数：3

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