RELIABILITY OF AVALANCHE-DIODES

被引:0
|
作者
不详
机构
来源
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:59 / 60
页数:2
相关论文
共 50 条
  • [41] PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION
    DONNELLY, JP
    ARMIENTO, CA
    DIADIUK, V
    GROVES, SH
    APPLIED PHYSICS LETTERS, 1979, 35 (01) : 74 - 76
  • [42] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION
    BLAKEY, PA
    CULSHAW, B
    GIBLIN, RA
    ELECTRONICS LETTERS, 1974, 10 (21) : 435 - 436
  • [43] LARGE-SIGNAL TIME-DOMAIN MODELING OF AVALANCHE-DIODES
    BLAKEY, PA
    GIBLIN, RA
    SEEDS, AJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1718 - 1728
  • [44] COMPUTER SIMULATIONS OF LARGE-SIGNAL OSCILLATION BEHAVIOR OF AVALANCHE-DIODES
    TOMINAGA, T
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 55 (05): : 124 - 130
  • [45] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES
    CULSHAW, B
    BLAKEY, PA
    GIBLIN, RA
    ELECTRONICS LETTERS, 1975, 11 (05) : 102 - 104
  • [46] GAAS PIN AVALANCHE-DIODES FOR PULSED MILLIMETER-WAVE OSCILLATORS
    HUBER, S
    GAUL, L
    CLAASSEN, M
    AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1993, 47 (01): : 13 - 21
  • [47] LASER AND AVALANCHE-DIODES FOR VELOCITY-MEASUREMENT BY LASER DOPPLER ANEMOMETRY
    DOPHEIDE, D
    FABER, M
    REIM, G
    TAUX, G
    EXPERIMENTS IN FLUIDS, 1988, 6 (05) : 289 - 297
  • [48] LARGE AREA REACH-THROUGH AVALANCHE-DIODES FOR RADIATION MONITORING
    WEBB, P
    JONES, AR
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 151 - 158
  • [49] BULK LEAKAGE IN AVALANCHE-DIODES DUE TO SILICON-METALLIZATION REACTIONS
    GORONKIN, H
    SOLID-STATE ELECTRONICS, 1975, 18 (10) : 891 - &
  • [50] GAAS PIN AVALANCHE-DIODES FOR PULSED V-BAND OSCILLATORS
    HUBER, S
    CLAASSEN, M
    HARTH, W
    GROTHE, H
    MICROWAVE JOURNAL, 1990, 33 (10) : 107 - +