BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS

被引：17
|
作者：
KOWALCZYK, SP
GRANT, RW
WALDROP, JR
KRAUT, EA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期
关键词：
D O I：
10.1116/1.582577
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：684 / 686
页数：3
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