共 50 条
- [1] PHOTOVOLTAIC EFFECTS IN TEMPERATURE-DEPENDENT FERMI-LEVEL MOVEMENT FOR GAAS(110) PHYSICAL REVIEW B, 1990, 41 (09): : 6092 - 6095
- [2] METALLIZATION AND FERMI-LEVEL MOVEMENT AT THE CS/GAAS(110) INTERFACES PHYSICAL REVIEW B, 1989, 39 (17): : 12655 - 12663
- [3] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL GAP(110) INTERFACES - TEMPERATURE-DEPENDENT FERMI LEVEL MOVEMENT JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 891 - 897
- [5] FERMI-LEVEL PINNING AT THE INTERFACES OF SB, SN, AND GE ON GAAS(110) SURFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 738 - 743
- [6] STRUCTURE, CHEMISTRY, AND FERMI-LEVEL MOVEMENT AT INTERFACES OF EPITAXIAL NIAL AND GAAS(001) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 724 - 729
- [9] ELECTRON-STATES AT ABRUPT METAL-GAAS(110) INTERFACES PHYSICA B & C, 1983, 117 (MAR): : 816 - 818
- [10] ELECTRON STATES AT ABRUPT METAL-GaAs(110) INTERFACES. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 816 - 818