THEORETICAL TRENDS IN ABRUPT (110) ALAS-GAAS, GE-GAAS, AND GE-ZNSE INTERFACES

被引：29
|
作者：
PICKETT, WE
COHEN, ML
机构：
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.569803
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1437 / 1443
页数：7
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