DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION

被引：42
|
作者：
STEPHENS, KG
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期
关键词：
D O I：
10.1016/0167-5087(83)90856-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：589 / 614
页数：26
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