DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION

被引：42

作者：

STEPHENS, KG

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90856-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：589 / 614

页数：26

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