MECHANISMS OF AMORPHIZATION AND RECRYSTALLIZATION IN ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS

被引：110

作者：

SADANA, DK

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27640

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90585-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：375 / 386

页数：12

共 50 条

[1] DIELECTRICS FOR ANNEALING OF ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS
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[2] RECRYSTALLIZATION KINETICS PATTERN IN III-V IMPLANTED SEMICONDUCTORS
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[3] DEFECTS IN WEAKLY DAMAGED ION-IMPLANTED GAAS AND OTHER III-V SEMICONDUCTORS
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[4] AMORPHIZATION AND RECRYSTALLIZATION OF INSB ION-IMPLANTED LAYERS
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[6] MECHANISMS OF AMORPHIZATION IN ION-IMPLANTED CRYSTALLINE SILICON
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[7] RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS AND HEAVILY DAMAGED SEMICONDUCTORS
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[8] RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS AND HEAVILY DAMAGED SEMICONDUCTORS
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[9] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS
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[10] DOSE EFFECTS IN ION-IMPLANTED COMPOUND SEMICONDUCTORS
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