MECHANISMS OF AMORPHIZATION AND RECRYSTALLIZATION IN ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS

被引:110
|
作者
SADANA, DK
机构
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27640
关键词
D O I
10.1016/0168-583X(85)90585-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:375 / 386
页数:12
相关论文
共 50 条
  • [31] Ion-implantation-induced phase transformation in III-V compound semiconductors
    Taniwaki, M
    Hayashi, Y
    Yoshiie, T
    JAPAN INSTITUTE OF METALS, PROCEEDINGS, VOL 12, (JIMIC-3), PTS 1 AND 2: SOLID - SOLID PHASE TRANSFORMATIONS, 1999, : 425 - 428
  • [32] Ion beam smoothing of indium-containing III-V compound semiconductors
    Frost, F
    Schindler, A
    Bigl, F
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (06): : 663 - 668
  • [33] FINELY FOCUSED ION-BEAM TECHNOLOGY IN III-V COMPOUND SEMICONDUCTORS
    HASHIMOTO, H
    MIYAUCHI, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 381 - 387
  • [34] Ion beam smoothing of indium-containing III-V compound semiconductors
    F. Frost
    A. Schindler
    F. Bigl
    Applied Physics A, 1998, 66 : 663 - 668
  • [35] LATTICE LOCATION OF ION-IMPLANTED RADIOACTIVE DOPANTS IN COMPOUND SEMICONDUCTORS
    WINTER, S
    BLASSER, S
    HOFSASS, H
    JAHN, S
    LINDNER, G
    WAHL, U
    RECKNAGEL, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 211 - 215
  • [36] DEFECTS AND AMORPHIZATION IN ION-IMPLANTED SILICON
    GYULAI, J
    REVESZ, P
    ZSOLDOS, L
    VERTESI, G
    GYIMESI, J
    ACTA PHYSICA ET CHEMICA, 1974, 20 (03): : 259 - 266
  • [37] Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
    Wendler, E.
    Wendler, L.
    APPLIED PHYSICS LETTERS, 2012, 100 (19)
  • [39] ANOMALOUS RECRYSTALLIZATION AND AMORPHIZATION OF ION-IMPLANTED GAAS UNDER PICOSECOND LASER-PULSES
    ABDULLAEV, AY
    GOVORKOV, SV
    KOROTEEV, NI
    PETROV, GI
    SHUMAI, IL
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 12 (22): : 1363 - 1368
  • [40] Ion implantation and thermal annealing of III-V compound semiconducting systems: Some problems of III-V narrow gap semiconductors
    Myasnikov, AM
    Gerasimenko, NN
    EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS : OPTICAL AND PHOTOTHERMAL CHARACTERIZATION, 1997, 46 : 257 - 293