DETERMINATION OF THE CONCENTRATION OF CHARGED IMPURITIES IN SILICON BY THE ELECTROREFLECTION METHOD

被引：0

作者：

BEGISHEV, AR

GALIEV, GB

KAPAEV, VV

MOKEROV, VG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 03期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：270 / 273

页数：4

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