DETERMINATION OF THE CONCENTRATION OF CHARGED IMPURITIES IN SILICON BY THE ELECTROREFLECTION METHOD

被引：0
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作者：
BEGISHEV, AR
GALIEV, GB
KAPAEV, VV
MOKEROV, VG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 03期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：270 / 273
页数：4
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