EFFECT OF CHARGED IMPURITIES ON YIELD POINT OF SILICON

被引：27

|

作者：

SIETHOFF, H

机构：

来源：

PHYSICA STATUS SOLIDI | 1970年 / 40卷 / 01期

关键词：

D O I：

10.1002/pssb.19700400116

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：153 / &

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