DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON-IRRADIATED SILICON CONTAINING HYDROGEN

被引：0

作者：

DU, YC ^{[1
]}

ZHANG, YF ^{[1
]}

QIN, GG ^{[1
]}

MENG, XT ^{[1
]}

机构：

[1] TSINGHUA UNIV, INST NUCL ENERGY, HSINCHU, TAIWAN

来源：

CHINESE PHYSICS-ENGLISH TR | 1985年 / 5卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / 29

页数：9

共 50 条

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