DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON-IRRADIATED SILICON CONTAINING HYDROGEN

被引：0
|
作者：
DU, YC [1 ]
ZHANG, YF [1 ]
QIN, GG [1 ]
MENG, XT [1 ]
机构：
[1] TSINGHUA UNIV, INST NUCL ENERGY, HSINCHU, TAIWAN
来源：
CHINESE PHYSICS-ENGLISH TR | 1985年 / 5卷 / 01期
关键词：
D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：21 / 29
页数：9
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