SUPPRESSION OF BORON PENETRATION IN P+ POLYSILICON GATE P-MOSFETS USING LOW-TEMPERATURE GATE-OXIDE N2O ANNEAL

被引：74

作者：

MA, ZJ ^{[1
]}

CHEN, JC ^{[1
]}

LIU, ZH ^{[1
]}

KRICK, JT ^{[1
]}

CHENG, YC ^{[1
]}

HU, C ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] CITY POLYTECH HONG KONG,HONG KONG,HONG KONG

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 03期

关键词：

D O I：

10.1109/55.285386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been reported that high-temperature (similar to 1100 degrees C) N2O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFET's. In this study, we show that low-temperature (900 similar to 950 degrees C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60 similar to 110 Angstrom gate oxides, a certain amount of nitrogen (similar to 2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate.

引用

页码：109 / 111

页数：3

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