TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY

被引：21

作者：

TSANG, WT ^{[1
]}

CHANG, AM ^{[1
]}

DITZENBERGER, JA ^{[1
]}

TABATABAIE, N ^{[1
]}

机构：

[1] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 962

页数：3

共 50 条

[41] HOT CARRIER PHONON INTERACTION IN 3-DIMENSIONAL AND TWO-DIMENSIONAL GA0.47IN0.53AS
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[42] STRUCTURE OF GA0.47IN0.53AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES AT DIFFERENT TEMPERATURES
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[43] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
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[44] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
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[45] PARTIAL ORDERING AND ENHANCED MOBILITY IN GA0.47IN0.53AS GROWN ON VICINAL (110)INP
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[46] Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
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[47] TWO-DIMENSIONAL ELECTRON-GAS AT AN MBE-GROWN, SELECTIVELY-DOPED, IN0.53GA0.47AS/IN0.52AL0.48AS INTERFACE
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[48] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
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[49] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE
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[50] BERYLLIUM DELTA-DOPING STUDIES IN INP AND GA0.47IN0.53AS DURING METALORGANIC MOLECULAR-BEAM EPITAXY
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