TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY

被引：21

作者：

TSANG, WT ^{[1
]}

CHANG, AM ^{[1
]}

DITZENBERGER, JA ^{[1
]}

TABATABAIE, N ^{[1
]}

机构：

[1] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 962

页数：3

共 50 条

[21] MATERIAL PROPERTIES OF GA0.47IN0.53AS GROWN ON INP BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
KUNZEL, H
BOTTCHER, J
GIBIS, R
URMANN, G
APPLIED PHYSICS LETTERS, 1992, 61 (11) : 1347 - 1349
[22] EXTREMELY HIGH BE DOPED GA0.47IN0.53AS GROWTH BY CHEMICAL BEAM EPITAXY
UCHIDA, TK
UCHIDA, T
MISE, K
KOYAMA, F
IGA, K
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[23] REDISTRIBUTION OF BERYLLIUM IN INP AND GA0.47IN0.53AS GROWN BY HYDRIDE SOURCE MOLECULAR-BEAM EPITAXY AND METALORGANIC MOLECULAR-BEAM EPITAXY
PANISH, MB
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JOURNAL OF CRYSTAL GROWTH, 1991, 112 (2-3) : 343 - 353
[24] GROWTH OF INP, GAAS, AND IN0.53GA0.47AS BY CHEMICAL BEAM EPITAXY
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 666 - 670
[25] ALLOY SCATTERING LIMITED MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS FORMED IN IN0.53GA0.47AS
BASU, PK
NAG, BR
SURFACE SCIENCE, 1984, 142 (1-3) : 256 - 259
[26] METALLORGANIC GAS-PHASE EPITAXY OF INP AND GA0.47IN0.53AS WITH INSITU REFINED ADDUCTS
FABIAN, W
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1985, 170 (1-4): : 42 - 43
[27] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS
LANG, DV
PANISH, MB
CAPASSO, F
ALLAM, J
HAMM, RA
SERGENT, AM
TSANG, WT
APPLIED PHYSICS LETTERS, 1987, 50 (12) : 736 - 738
[28] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS IN INP/GA0.47IN0.53AS BY ADMITTANCE SPECTROSCOPY
LANG, DV
PANISH, MB
CAPASSO, F
ALLAM, J
HAMM, RA
SERGENT, AM
TSANG, WT
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1215 - 1220
[29] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
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DINGLE, R
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CHO, AY
APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[30] COOLING OF HOT CARRIERS IN 3-DIMENSIONAL AND TWO-DIMENSIONAL GA0.47IN0.53AS
LOBENTANZER, H
STOLZ, W
NAGLE, J
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PHYSICAL REVIEW B, 1989, 39 (08): : 5234 - 5244

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