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- [38] Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1185 - 1189
- [39] Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells PHYSICAL REVIEW B, 1996, 53 (03): : 1038 - 1041