TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY

被引：21

作者：

TSANG, WT ^{[1
]}

CHANG, AM ^{[1
]}

DITZENBERGER, JA ^{[1
]}

TABATABAIE, N ^{[1
]}

机构：

[1] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 962

页数：3

共 50 条

[1] TWO-DIMENSIONAL ELECTRON-GAS DENSITY CALCULATION IN GA0.47IN0.53AS/AL0.48IN0.52AS, GA0.47IN0.53AS/INP, AND GA0.47IN0.53AS/INP/AL0.48IN0.52AS HETEROSTRUCTURES
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[2] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[3] TRANSIENT TRANSPORT IN BULK GA0.47IN0.53AS AND THE TWO-DIMENSIONAL ELECTRON-GAS IN GA0.47IN0.53AS/AL0.48IN0.52AS
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[5] HIGH MOBILITY TWO-DIMENSIONAL ELECTRON-GAS IN INP/GA0.47IN0.53AS HETEROJUNCTIONS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[6] GA0.47IN0.53AS/INP SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY - ABSORPTION, PHOTOLUMINESCENCE EXCITATION, AND PHOTOCURRENT SPECTROSCOPIES
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[7] GA0.47IN0.53AS/INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY
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[8] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY
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[9] ELECTRON-SPIN RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GA0.47IN0.53AS-INP HETEROSTRUCTURES
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[10] 1ST OBSERVATION OF TWO-DIMENSIONAL HOLE GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY METALORGANIC VAPOR-DEPOSITION
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