共 50 条
- [42] COMMON AND SPECIFIC MECHANISMS OF DISLOCATION-STRUCTURE FORMATION IN SINGLE CRYSTALS AND POLYCRYSTALS OF CU-AL SOLID-SOLUTIONS PHYSICS OF METALS, 1985, 6 (01): : 129 - 135
- [43] Influence of tellurium impurity on the Properties of Ga1−XInXAsYSb1−Y (X>0.22) solid solutions Semiconductors, 2002, 36 : 855 - 862
- [45] The role of lead in growing Ga1−XInXAsYSb1−Y solid solutions by liquid-phase epitaxy Semiconductors, 2001, 35 : 904 - 911
- [49] Engineering of Ga1-xInxAsySb1-y/GaSb quantum well for III-V based devices emitting near 2.7 μm 2ND INTERNATIONAL CONFERENCE ON MATERIALS PHYSICS AND APPLICATIONS (JIPMA 2009/MATERIAUX 2009), 2010, 13
- [50] FORMATION OF DISLOCATION-STRUCTURE IN ALUMINUM DURING DEFORMATION .1. ZEITSCHRIFT FUR METALLKUNDE, 1974, 65 (05): : 346 - 352