PECULIARITIES OF DISLOCATION-STRUCTURE FORMATION IN EPITAXIAL LAYERS OF SOLID-SOLUTIONS GA1-XINXASYSB1-Y

被引:0
|
作者
BOCHKARYOV, AE [1 ]
DRUZHININA, LV [1 ]
KRASILNIKOV, VS [1 ]
LEBEDEV, SN [1 ]
YUGOVA, TG [1 ]
机构
[1] GORKI ENGN PHYS RES INST,GORKI,USSR
来源
KRISTALLOGRAFIYA | 1989年 / 34卷 / 01期
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:176 / 181
页数:6
相关论文
共 50 条
  • [31] GROWTH-KINETICS AND DISLOCATION-STRUCTURE OF EPITAXIAL LAYERS OF PB1-XSNXTE
    SAUNINA, TV
    CHAN, KL
    YASKOV, DA
    INORGANIC MATERIALS, 1989, 25 (06) : 810 - 812
  • [32] Use of lead as a neutral solvent for obtaining solid Ga1−xInxAsySb1−y solutions
    I. A. Andreev
    E. V. Kunitsyna
    Yu. V. Solov’ev
    Technical Physics Letters, 1999, 25 : 792 - 793
  • [33] PECULIARITIES OF DEFECT FORMATION IN EPITAXIAL LAYERS GAXIN1-XASYSB1-Y
    VDOVIN, VI
    DOLGINOV, LM
    DRUZHININA, LV
    LAPSHIN, AN
    MILVIDSKY, MG
    OSVENSKY, VB
    SHERSHAKOV, AN
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1981, 26 (04): : 799 - 804
  • [34] Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1-xInxAsySb1-y
    Cusco, R.
    Ibanez, J.
    Artus, L.
    APPLIED PHYSICS LETTERS, 2010, 97 (09)
  • [35] Photoluminescence of Ga1−xInxAsySb1−y solid solutions lattice-matched to InAs
    K. D. Moiseev
    A. A. Toropov
    Ya. V. Terent’ev
    M. P. Mikhailova
    Yu. P. Yakovlev
    Semiconductors, 2000, 34 : 1376 - 1380
  • [36] ENERGY AND EMISSION SPECTRA OF THE Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES
    Manak, I. S.
    Ushakov, D. V.
    Bialiausky, U. S.
    CAOL 2008: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, 2008, : 285 - 287
  • [37] GROWTH AND PHOTOLUMINESCENCE OF GASB AND GA1-XINXASYSB1-Y GROWN ON GASB SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY
    IYER, S
    HEGDE, S
    ABULFADL, A
    BAJAJ, KK
    MITCHEL, W
    PHYSICAL REVIEW B, 1993, 47 (03): : 1329 - 1339
  • [38] FORMATION OF IMPERFECTIONS IN LIQUID-PHASE EPITAXIAL LAYERS OF ALXGA1-XSB SOLID-SOLUTIONS
    VILISOV, AA
    GERMOGENOV, VP
    KIM, FS
    EPIKTETOVA, LE
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (06): : 75 - &
  • [39] SELENIUM DISTRIBUTION IN THE EPITAXIAL LAYERS OF PBTE1-ZSEZ SOLID-SOLUTIONS
    YAKIMCHUK, DY
    TSVEIBAK, IY
    SOKOLOV, IA
    KRAPUKHIN, VV
    INORGANIC MATERIALS, 1986, 22 (10) : 1434 - 1437
  • [40] Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy
    Olvera-Hernandez, J.
    Olvera-Cervantes, J.
    Rojas-Lopez, M.
    Navarro-Contreras, H.
    Vidal, M. A.
    de Anda, F.
    INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES (ICMAT 2005), 2006, 28 : 147 - +