The role of lead in growing Ga1−XInXAsYSb1−Y solid solutions by liquid-phase epitaxy

被引：0
|
作者：
T. I. Voronina
T. S. Lagunova
E. V. Kunitsyna
Ya. A. Parkhomenko
D. A. Vasyukov
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2001年 / 35卷
关键词：
Activation Energy; Solid Solution; Electrical Property; Magnetic Material; Acceptor Level;
D O I：
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学科分类号：
摘要：
The electrical properties of Ga1−XInXAsYSb1−Y (X=0.14–0.27) solid solutions grown from a Pb-containing solution-melt were investigated for the first time. Three acceptor levels were found to exist, specifically, a shallow level with the activation energy EA1≈0.008–0.015 eV, and two deep levels EA2≈0.024–0.033 eV and EA3≈0.07 eV. It is demonstrated that the use of Pb makes it possible to obtain undoped solid solutions with a low concentration of defects and impurities and with high carrier mobility.
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页码：904 / 911
页数：7
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