The role of lead in growing Ga1−XInXAsYSb1−Y solid solutions by liquid-phase epitaxy

The electrical properties of Ga1−XInXAsYSb1−Y (X=0.14–0.27) solid solutions grown from a Pb-containing solution-melt were investigated for the first time. Three acceptor levels were found to exist, specifically, a shallow level with the activation energy EA1≈0.008–0.015 eV, and two deep levels EA2≈0.024–0.033 eV and EA3≈0.07 eV. It is demonstrated that the use of Pb makes it possible to obtain undoped solid solutions with a low concentration of defects and impurities and with high carrier mobility.