CHARACTERIZATION OF ELECTRICAL-PROPERTIES OF OXYGEN HYDROGEN RICH SILICON-NITRIDE FILMS FOR MNOS DEVICES

被引：0

作者：

XU, D ^{[1
]}

KAPOOR, VJ ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,ELECTR DEVICES & MAT RES LAB,CINCINNATI,OH 45221

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C361 / C361

页数：1

共 50 条

[1] THE COMBINED EFFECT OF HYDROGEN AND OXYGEN IMPURITIES IN THE SILICON-NITRIDE FILM OF MNOS DEVICES
KAPOOR, VJ
XU, D
BAILEY, RS
TURI, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (03) : 915 - 921
[2] STABILITY OF ELECTRICAL-PROPERTIES OF NITROGEN-RICH, SILICON-RICH, AND STOICHIOMETRIC SILICON-NITRIDE FILMS
LAU, WS
FONASH, SJ
KANICKI, J
JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2765 - 2767
[3] PHYSICAL AND ELECTRICAL-PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE FILMS
FUNG, CD
NAGY, TE
KO, WH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C78 - C78
[4] STRUCTURE, OPTICAL AND ELECTRICAL PROPERTIES OF SILICON-RICH SILICON-NITRIDE FILMS
VOSKOBOYNIKOV, VV
GRITSENKO, VA
DIKOVSKAYA, ND
ZAITSEV, BN
MOGILNICOV, KP
OSADCHII, VM
SINITSA, SP
EDELMAN, FL
THIN SOLID FILMS, 1976, 32 (02) : 339 - 342
[5] CHARGE-DISTRIBUTIONS IN SILICON-NITRIDE OF MNOS DEVICES
ENDO, N
SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1153 - 1156
[6] ANALYSES FOR STOICHIOMETRY AND FOR HYDROGEN AND OXYGEN IN SILICON-NITRIDE FILMS
STEIN, HJ
PICRAUX, ST
HOLLOWAY, PH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1008 - 1014
[7] PHYSICAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON NITRIDE-INDIUM PHOSPHIDE INTERFACE
FUJIWARA, I
YAJIMA, Y
FUKUZAWA, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2629 - 2632
[8] ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED FLUORINATED SILICON-NITRIDE
LIVENGOOD, RE
HESS, DW
THIN SOLID FILMS, 1988, 162 (1-2) : 59 - 65
[9] ELECTRICAL-PROPERTIES AND MICROSTRUCTURES OF HOT-PRESSED SILICON-NITRIDE
KATANO, Y
OHNO, H
KATSUTA, H
JOURNAL OF NUCLEAR MATERIALS, 1986, 141 : 396 - 400
[10] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
ARNETT, PC
YUN, BH
APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

← 1 2 3 4 5 →