LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE

被引：158
作者：
AONO, M
HOU, Y
OSHIMA, C
ISHIZAWA, Y
机构：
来源：
PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.49.567
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：567 / 570
页数：4
相关论文
共 32 条
[21]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&
[22]   STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].
LEVINE, JD .
SURFACE SCIENCE, 1973, 34 (01) :90-107
[23]   EXCITONIC INSTABILITIES, VACANCIES, AND RECONSTRUCTION OF COVALENT SURFACES [J].
PHILLIPS, JC .
SURFACE SCIENCE, 1973, 40 (03) :459-469
[24]   ELECTRON-DIFFRACTION STUDY OF STRUCTURE OF SILICON (100) [J].
POPPENDIECK, TD ;
NGOC, TC ;
WEBB, MB .
SURFACE SCIENCE, 1978, 75 (02) :287-315
[25]   PHOTOEMISSION MEASUREMENT OF SURFACE STATES FOR ANNEALED SILICON [J].
ROWE, JE .
PHYSICS LETTERS A, 1974, A 46 (06) :400-402
[26]   SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].
ROWE, JE ;
IBACH, H .
PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424
[27]   ATOMIC ARRANGEMENT OF THE SI(111)-SQUARE-ROOT3XSQUARE-ROOT3-AG STRUCTURE DERIVED FROM LOW-ENERGY ION-SCATTERING SPECTROSCOPY [J].
SAITOH, M ;
SHOJI, F ;
OURA, K ;
HANAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L421-L424
[28]   STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].
SCHLIER, RE ;
FARNSWORTH, HE .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926
[29]   POSSIBLE STRUCTURES FOR CLEAN, ANNEALED SURFACES OF GERMANIUM AND SILICON [J].
SEIWATZ, R .
SURFACE SCIENCE, 1964, 2 :473-483
[30]   EVIDENCE OF MULTILAYER DISTORTIONS IN THE RECONSTRUCTED SI(001) SURFACE [J].
STENSGAARD, I ;
FELDMAN, LC ;
SILVERMAN, PJ .
SURFACE SCIENCE, 1981, 102 (01) :1-6
1234