SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON

被引：204

作者：

ROWE, JE ^{[1
]}

IBACH, H ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.32.421

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：421 / 424

页数：4

共 16 条

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[5] PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION [J].

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[6] FOLDING AND NONFOLDING ELECTRON DISTRIBUTIONS IN ION-NEUTRALIZATION SPECTROSCOPY AND EVIDENCE FOR AN ELECTRONIC SUPERLATTICE AT SI(111)7 SURFACE [J].

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[7] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].

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BECKER, GE .

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[8]

HAMANN DR, PRIVATE COMMUNICATIO

[9]

IBACH H, TO BE PUBLISHED

[10]

JEANS MR, 1971, 31 P PHYS EL C GAITH

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