PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION

被引：139
作者：
GROBMAN, WD
EASTMAN, DE
机构：
来源：
PHYSICAL REVIEW LETTERS | 1972年 / 29卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.29.1508
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1508 / &
相关论文
共 14 条
[1]   PHOTOEMISSION STUDIES OF COPPER + SILVER - EXPERIMENT [J].
BERGLUND, CN ;
SPICER, WE .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (4A) :1044-&
[2]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[3]  
Brust D., 1968, METHODS COMPUTATIONA, V8, P33
[4]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[5]   PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].
EASTMAN, DE ;
GROBMAN, WD .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&
[6]  
HERMAN F, 1968, METHODS COMPUTATIONA, V8, P193
[7]  
JANAK JF, 1971, 323 NBS SPEC PUBL
[8]   ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].
KANE, EO .
PHYSICAL REVIEW, 1967, 159 (03) :624-&
[9]   CALCULATION OF PHOTOELECTRIC EFFECT IN GERMANIUM [J].
SARAVIA, LR ;
CASAMAYO.L .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (07) :1541-&
[10]   CALCULATION OF PHOTOELECTRIC EFFECT IN SILICON [J].
SARAVIA, LR ;
CASAMAYOU, L .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (05) :1075-+
12