LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES

被引：249

作者：

LANDER, JJ

MORRISON, J

机构：

来源：

JOURNAL OF CHEMICAL PHYSICS | 1962年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.1733155

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：729 / &

共 17 条

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[2]

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[5] IMPROVED LOW ENERGY ELECTRON DIFFRACTION APPARATUS [J].

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HARTMAN, CD .

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[6]

GIESSEN D, 1959, Z METALLK, V50, P274

[7] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

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[8] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

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[9] ADSORPTION OF HYDROGEN ON SILICON [J].

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JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) :1568-1576

[10] DISPLACEMENT PROCESSES ON GERMANIUM SURFACES [J].

MAXWELL, KH ;

GREEN, M .

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