Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy
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作者:
Gwo, S
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JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPANJOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
Gwo, S
[1
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Miwa, S
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JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPANJOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
Miwa, S
[1
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Ohno, H
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JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPANJOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
Ohno, H
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Fan, JF
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JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPANJOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
Fan, JF
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Tokumoto, H
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JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPANJOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
Tokumoto, H
[1
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[1] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InAs) and Ga surface vacancies (V-Ga) on the (110) cleavage surfaces of m-V compounds. In the scanning tunneling microscopy images at low sample bias voltages, the charged dopants and surface vacancies exhibit the delocalized feature seen as protrusions or depressions extended over several lattice sites on the (110) face. This approach opens up new opportunities for studying individual defects in compound semiconductors on the atomic scale.