Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy

被引：9

作者：

Gwo, S ^{[1
]}

Miwa, S ^{[1
]}

Ohno, H ^{[1
]}

Fan, JF ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

point defect; dopant impurity; vacancy; defect cluster; compound semiconductor; scanning tunneling microscopy;

D O I：

10.4028/www.scientific.net/MSF.196-201.1949

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InAs) and Ga surface vacancies (V-Ga) on the (110) cleavage surfaces of m-V compounds. In the scanning tunneling microscopy images at low sample bias voltages, the charged dopants and surface vacancies exhibit the delocalized feature seen as protrusions or depressions extended over several lattice sites on the (110) face. This approach opens up new opportunities for studying individual defects in compound semiconductors on the atomic scale.

引用

页码：1949 / 1953

页数：5

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