Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy

被引：9

作者：

Gwo, S ^{[1
]}

Miwa, S ^{[1
]}

Ohno, H ^{[1
]}

Fan, JF ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

point defect; dopant impurity; vacancy; defect cluster; compound semiconductor; scanning tunneling microscopy;

D O I：

10.4028/www.scientific.net/MSF.196-201.1949

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InAs) and Ga surface vacancies (V-Ga) on the (110) cleavage surfaces of m-V compounds. In the scanning tunneling microscopy images at low sample bias voltages, the charged dopants and surface vacancies exhibit the delocalized feature seen as protrusions or depressions extended over several lattice sites on the (110) face. This approach opens up new opportunities for studying individual defects in compound semiconductors on the atomic scale.

引用

页码：1949 / 1953

页数：5

共 50 条

[31] ATOMIC-SCALE MANIPULATION IN AIR WITH THE SCANNING TUNNELING MICROSCOPE
GARCIA, RG
APPLIED PHYSICS LETTERS, 1992, 60 (16) : 1960 - 1962
[32] SCANNING TUNNELING MICROSCOPE ACHIEVES ATOMIC-SCALE RESOLUTION
BAUM, RM
CHEMICAL & ENGINEERING NEWS, 1986, 64 (16) : 22 - 25
[33] ATOMIC-SCALE VARIATIONS OF THE TUNNELING DISTRIBUTION IN A SCANNING TUNNELING MICROSCOPE OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
SIRRINGHAUS, H
LEE, EY
VONKANEL, H
PHYSICAL REVIEW LETTERS, 1995, 74 (20) : 3999 - 4002
[34] Resolving complex atomic-scale spin structures by spin-polarized scanning tunneling microscopy
Wortmann, D
Heinze, S
Kurz, P
Bihlmayer, G
Blügel, S
PHYSICAL REVIEW LETTERS, 2001, 86 (18) : 4132 - 4135
[35] Atomic-scale structure of a SrTiO3 bicrystal boundary studied by scanning tunneling microscopy
Jiang, QD
Pan, XQ
Zegenhagen, J
PHYSICAL REVIEW B, 1997, 56 (11): : 6947 - 6951
[36] MAGNETIC IMAGING OF SURFACES ON THE ATOMIC-SCALE BY SPIN-POLARIZED SCANNING-TUNNELING-MICROSCOPY
WIESENDANGER, R
JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 5816 - 5816
[37] Atomic-scale characterization of highly doped Si impurities in GaAs using scanning tunneling microscopy
Ishida, Nobuyuki
Mano, Takaaki
Noda, Takeshi
APPLIED SURFACE SCIENCE, 2022, 583
[38] Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages
Qin, XR
Swartzentruber, BS
Lagally, MG
PHYSICAL REVIEW LETTERS, 2000, 84 (20) : 4645 - 4648
[39] Atomic-scale control of surface reconstruction on Ge(001) by scanning tunneling microscopy at 80 K
Takagi, Y
Nakatsuji, K
Yamada, M
Komori, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (3B): : L386 - L389
[40] Atomic-Scale Characterization of II-VI Compound Semiconductors
Smith, David J.
JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3168 - 3174

← 1 2 3 4 5 →