Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy

被引：9

作者：

Gwo, S ^{[1
]}

Miwa, S ^{[1
]}

Ohno, H ^{[1
]}

Fan, JF ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

point defect; dopant impurity; vacancy; defect cluster; compound semiconductor; scanning tunneling microscopy;

D O I：

10.4028/www.scientific.net/MSF.196-201.1949

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InAs) and Ga surface vacancies (V-Ga) on the (110) cleavage surfaces of m-V compounds. In the scanning tunneling microscopy images at low sample bias voltages, the charged dopants and surface vacancies exhibit the delocalized feature seen as protrusions or depressions extended over several lattice sites on the (110) face. This approach opens up new opportunities for studying individual defects in compound semiconductors on the atomic scale.

引用

页码：1949 / 1953

页数：5

共 50 条

[1] Atomic-scale scanning tunneling microscopy of amorphous surfaces
Bürgler, DE
Schmidt, CM
Schaller, DM
Meisinger, F
Schaub, TM
Baratoff, A
Güntherodt, HJ
PHYSICAL REVIEW B, 1999, 59 (16) : 10895 - 10902
[2] Atomic-scale metal adhesion investigated by scanning tunneling microscopy
Durig, U., 1600, IBM, Armonk, NY, United States (38):
[3] Atomic-Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy
Ko, Wonhee
Ma, Chuanxu
Nguyen, Giang D.
Kolmer, Marek
Li, An-Ping
ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (52)
[4] ATOMIC-SCALE IMAGING OF DNA USING SCANNING TUNNELING MICROSCOPY
DRISCOLL, RJ
YOUNGQUIST, MG
BALDESCHWIELER, JD
NATURE, 1990, 346 (6281) : 294 - 296
[5] Atomic-scale electrochemistry on the surface of a manganite by scanning tunneling microscopy
Vasudevan, Rama K.
Tselev, Alexander
Gianfrancesco, Anthony G.
Baddorf, Arthur P.
Kalinin, Sergei V.
APPLIED PHYSICS LETTERS, 2015, 106 (14)
[6] Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Stock, Taylor J. Z.
Warschkow, Oliver
Constantinou, Procopios C.
Li, Juerong
Fearn, Sarah
Crane, Eleanor
Hofmann, Emily V. S.
Koelker, Alexander
McKenzie, David R.
Schofield, Steven R.
Curson, Neil J.
ACS NANO, 2020, 14 (03) : 3316 - 3327
[7] Atomic-Scale Analysis of Polydiacetylene Nanowires by Scanning Tunneling Microscopy
Giridharagopal, Rajiv
Kelly, Kevin F.
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 1006 - 1010
[8] Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy
Pham, Van Dong
Gonzalez, Cesar
Dappe, Yannick J.
Dong, Chengye
Robinson, Joshua A.
Trampert, Achim
Engel-Herbert, Roman
CARBON, 2024, 227
[9] Scanning tunneling microscopy of defects in semiconductors
Jäger, ND
Weber, ER
IDENTIFICATION OF DEFECTS IN SEMICONDUCTORS, 1999, 51 : 261 - 296
[10] ATOMIC-SCALE METAL ADHESION INVESTIGATED BY SCANNING-TUNNELING-MICROSCOPY
DURIG, U
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1994, 38 (04) : 347 - 366

← 1 2 3 4 5 →