HIGH-RESOLUTION TEM STUDY OF THE SI(001)/SIO2 INTERFACE

被引：0
|
作者：
DANTERROCHES, C
机构：
来源：
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1984年 / 9卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：147 / &
相关论文
共 50 条
  • [1] HIGH-RESOLUTION MEASUREMENT OF THE STEP DISTRIBUTION AT THE SI/SIO2 INTERFACE
    HENZLER, M
    MARIENHOFF, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 346 - 348
  • [2] THE SI(001)/SIO2 INTERFACE
    OURMAZD, A
    FUOSS, PH
    BEVK, J
    MORAR, JF
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 365 - 371
  • [3] Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling
    Nakajima, K
    Suzuki, M
    Kimura, K
    Yamamoto, M
    Teramoto, A
    Ohmi, T
    Hattori, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A): : 2467 - 2469
  • [4] EVALUATION OF SIO2/(001)SI INTERFACE ROUGHNESS USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND SIMULATION
    AKATSU, H
    SUMI, Y
    OHDOMARI, I
    PHYSICAL REVIEW B, 1991, 44 (04): : 1616 - 1621
  • [5] VIBRATIONAL STUDY OF THE SIO2/SI INTERFACE BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY
    THIRY, PA
    LIEHR, M
    PIREAUX, JJ
    SPORKEN, R
    CAUDANO, R
    VIGNERON, JP
    LUCAS, AA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1118 - 1121
  • [6] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF STRUCTURAL FEATURES AT THE SI/SIO2 INTERFACE
    CARIM, AH
    SINCLAIR, R
    MATERIALS LETTERS, 1987, 5 (03) : 94 - 98
  • [7] Compositional transition layer in SiO2/Si interface observed by high-resolution RBS
    Kimura, K
    Nakajima, K
    APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 283 - 286
  • [8] OXIDATION OF SC AT A SIO2/SI STRUCTURE - A HIGH-RESOLUTION AUGER STUDY
    OFNER, H
    NETZER, FP
    MATTHEW, JAD
    SURFACE SCIENCE, 1994, 310 (1-3) : L601 - L604
  • [9] Oxidation of Si(001) surface and formation of Si/SiO2 interface
    Uchiyama, T
    Uda, T
    Terakura, K
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 97 - 98
  • [10] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE
    KRIVANEK, OL
    SHENG, TT
    TSUI, DC
    APPLIED PHYSICS LETTERS, 1978, 32 (07) : 437 - 439
12345