HIGH-RESOLUTION TEM STUDY OF THE SI(001)/SIO2 INTERFACE

被引：0
|
作者：
DANTERROCHES, C
机构：
来源：
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1984年 / 9卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：147 / &
相关论文
共 50 条
  • [31] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF TITANIUM SILICIDES ON SI AND SIO2 INTERFACES
    VASILIEV, AL
    KISELEV, NA
    LEBEDEV, OI
    VASILIEV, AG
    ORLIKOVSKIJ, AA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1991, 55 (08): : 1483 - 1486
  • [32] The evolution of (001) Si/SiO2 interface roughness during thermal oxidation
    Fang, SJ
    Chen, W
    Yamanaka, T
    Helms, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : 2886 - 2893
  • [33] GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001)/SIO2 INTERFACE WIDTH
    TANG, MT
    EVANSLUTTERODT, KW
    GREEN, ML
    BRASEN, D
    KRISCH, K
    MANCHANDA, L
    HIGASHI, GS
    BOONE, T
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 748 - 750
  • [34] Atomic scale dielectric constant near the SiO2/Si(001) interface
    Wakui, Sadakazu
    Nakamura, Jun
    Natori, Akiko
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1579 - 1584
  • [35] Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
    Nakajima, K
    Joumori, S
    Suzuki, M
    Kimura, K
    Osipowicz, T
    Tok, KL
    Zheng, JZ
    See, A
    Zhang, BC
    APPLIED SURFACE SCIENCE, 2004, 237 (1-4) : 416 - 420
  • [36] DIRECT TEM STUDY OF THE ROUGHENING OF SIO2 SI INTERFACE INDUCED DURING AES DEPTH PROFILING
    BARNA, PB
    GOSZTOLA, L
    ZALAR, A
    RASIGNI, M
    SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 328 - 328
  • [37] KINETIC SMOOTHENING - GROWTH THICKNESS DEPENDENCE OF THE INTERFACE WIDTH OF THE SI(001)/SIO2 INTERFACE
    DAWSON, JL
    KRISCH, K
    EVANSLUTTERODT, KW
    TANG, MT
    MANCHANDA, L
    GREEN, ML
    BRASEN, D
    HIGASHI, GS
    BOONE, T
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4746 - 4749
  • [38] Kinetic smoothening: growth thickness dependence of the interface width of the Si(001)/SiO2 interface
    Dawson, J.L.
    Krisch, K.
    Evans-Lutterodt, K.W.
    Tang, Mau-Tsu
    Manchanda, L.
    Green, M.L.
    Brasen, D.
    Higashi, G.S.
    Boone, T.
    Journal of Applied Physics, 1995, 77 (09):
  • [39] Cathodoluminescence study of Si/SiO2 interface structure
    Zamoryarskaya, MV
    Sokolov, VI
    Plotnikov, V
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 214 - 217
  • [40] ROUGHNESS OF THE SILICON (001)/SIO2 INTERFACE
    TANG, MT
    EVANSLUTTERODT, KW
    HIGASHI, GS
    BOONE, T
    APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3144 - 3146
12345